Transmission electron microscopy study of damage layer formed through ion beam induced deposition of platinum on silicon substrate

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 6, 2010, Pages

  Park, Byong Chon ^a   Park, Yun Chang ^b   Lee, Hwack Joo ^a   Kim, Young Heon ^a  

^a Korea Research Institute of Standards and Science   (South Korea)

^b National Nano Fab Center (NNFC)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; BEAM PLASMA INTERACTIONS; ELECTRON BEAMS; ELECTRONS; ION BEAMS; ION BOMBARDMENT; IONS; OXIDE FILMS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ANALYTICAL INSTRUMENT; CHEMICAL AFFINITIES; DAMAGED AREA; DIFFUSION RATE; ELECTRON BEAM-INDUCED DEPOSITION; ION BEAM INDUCED DEPOSITION; NANOFABRICATION; NATIVE OXIDE FILM; PARTICLE FORMATIONS; SAMPLE PREPARATION; SILICON CRYSTAL; SILICON LAYER; SILICON SUBSTRATES; THREE-LAYER; TRIMETHYL;

PLATINUM;

EID: 78650162003     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3516651     Document Type: Article

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