Effect of oxygen vacancy distribution on the thermoelectric properties of La-doped SrTiO3 epitaxial thin films

Journal of Applied Physics

Volumn 112, Issue 11, 2012, Pages

  Sarath Kumar, S R ^a   Abutaha, A I ^a   Hedhili, M N ^a   Alshareef, H N ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

DISPERSION RELATIONS; EFFECT OF OXYGEN; EFFECTIVE MASS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL CONDUCTIVITY; ELECTRICAL MEASUREMENT; ELECTRON EFFECTIVE MASS; EPITAXIAL THIN FILMS; HIGH TEMPERATURE; INTERMEDIATE TEMPERATURES; LORENTZ OSCILLATOR; OXYGEN NON-STOICHIOMETRY; POWER FACTORS; SRTIO; THERMOELECTRIC PROPERTIES;

ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; OPTICAL PROPERTIES; OXYGEN VACANCIES; SPECTROSCOPIC ELLIPSOMETRY; STOICHIOMETRY; STRONTIUM TITANATES; THERMOELECTRIC EQUIPMENT; THIN FILMS; TRANSPORT PROPERTIES;

EPITAXIAL GROWTH;

EID: 84871205966     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4767840     Document Type: Article

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