Low-resistivity long-length horizontal carbon nanotube bundles for interconnect applications - Part i: Process development

IEEE Transactions on Electron Devices

Volumn 60, Issue 9, 2013, Pages 2862-2869

  Li, Hong ^a,b   Liu, Wei ^a   Cassell, Alan M ^c   Kreupl, Franz ^d   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b MICRON TECHNOLOGY INC   (United States)

^c NASA AMES RESEARCH CENTER   (United States)

^d TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

Carbon nanotubes (CNTs); chemical vapor deposition; contact; horizontally aligned; interconnects; Manhattan structure; resistivity

Indexed keywords

CARBON NANOTUBE BUNDLE; FLATTENING PROCESS; HORIZONTALLY ALIGNED; INTERCONNECT APPLICATIONS; MANHATTANS; PROCESS DEVELOPMENT; RESEARCH AND TECHNOLOGY DEVELOPMENT; THEORETICAL RESEARCH;

CHEMICAL VAPOR DEPOSITION; CONTACTS (FLUID MECHANICS); ELECTRIC CONDUCTIVITY; FABRICATION; OPTICAL INTERCONNECTS;

CARBON NANOTUBES;

EID: 84883273978     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2275259     Document Type: Article

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