Effects of intrinsic defects on electronic structure and optical properties of Ga-doped ZnO

Journal of Alloys and Compounds

Volumn 616, Issue , 2014, Pages 122-127

  Lee, Ming Hsien ^a   Peng, Yen Chun ^a   Wu, Hsuan Chung ^a  

^a MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

Ab initio; Electronic structure; Intrinsic defects; Optical properties; ZnO

Indexed keywords

CARRIER CONCENTRATION; ELECTRONIC STRUCTURE; FLOW RATE; GALLIUM; OPTICAL PROPERTIES; ZINC OXIDE;

AB INITIO; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES; ENVIRONMENT INFLUENCE; FORMATION ENERGIES; INTRINSIC DEFECTS; PREPARATION PROCESS; ZNO; GA-DOPED ZNO;

ZINC; ELECTRONIC STRUCTURE;

EID: 84905594831     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2014.07.098     Document Type: Article

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