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Volumn 201, Issue 7 SPEC. ISS., 2006, Pages 4004-4007
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Effects of oxygen partial pressure on doping properties of Ga-doped ZnO films prepared by ion-plating with traveling substrate
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Author keywords
Ga; Ion plating; ZnO
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Indexed keywords
CARRIER CONCENTRATION;
ELECTRIC PROPERTIES;
GALLIUM;
OXYGEN;
PARTIAL PRESSURE;
SEMICONDUCTOR DOPING;
SOLUBILITY;
CRYSTALLINITY;
HALL MOBILITY;
ION-PLATING;
ZINC OXIDE;
CARRIER CONCENTRATION;
ELECTRIC PROPERTIES;
GALLIUM;
OXYGEN;
PARTIAL PRESSURE;
SEMICONDUCTOR DOPING;
SOLUBILITY;
ZINC OXIDE;
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EID: 33751240488
PISSN: 02578972
EISSN: None
Source Type: Journal
DOI: 10.1016/j.surfcoat.2006.08.019 Document Type: Article |
Times cited : (30)
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References (13)
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