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Volumn 201, Issue 7 SPEC. ISS., 2006, Pages 4004-4007

Effects of oxygen partial pressure on doping properties of Ga-doped ZnO films prepared by ion-plating with traveling substrate

Author keywords

Ga; Ion plating; ZnO

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; GALLIUM; OXYGEN; PARTIAL PRESSURE; SEMICONDUCTOR DOPING; SOLUBILITY;

EID: 33751240488     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2006.08.019     Document Type: Article
Times cited : (30)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.