A compact model of program window in HfOx RRAM devices for conductive filament characteristics analysis

IEEE Transactions on Electron Devices

Volumn 61, Issue 8, 2014, Pages 2668-2673

  Larcher, Luca ^a   Puglisi, Francesco Maria ^a   Pavan, Paolo ^a   Padovani, Andrea ^a   Vandelli, Luca ^a   Bersuker, Gennadi ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b SEMATECH   (United States)

Author keywords

Charge transport; compact modeling; non volatile memories.

Indexed keywords

CHARGE TRANSFER; ELECTRON DEVICES; ELECTRONICS ENGINEERING;

CHARACTERISTICS ANALYSIS; COMPACT MODEL; CONDUCTIVE FILAMENTS; HIGH-RESISTANCE STATE; NON-VOLATILE MEMORY; PERFORMANCE OPTIMIZATIONS; RESISTIVE RANDOM ACCESS MEMORY; STATISTICAL DISTRIBUTION;

RANDOM ACCESS STORAGE;

EID: 84905191693     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2329020     Document Type: Article

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