Leakage current in HfO 2 stacks: From physical to compact modeling

Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Volumn , Issue , 2012, Pages 809-814

  Larcher, L ^a   Padovani, A ^a   Pavan, P ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

Compact modeling; Device modeling and simulation; Gate oxide; High k dielectrics; Leakage current; SILC; Trap assisted tunneling

Indexed keywords

COMPACT MODELING; DEVICE MODELING; GATE OXIDE; HIGH-K DIELECTRIC; SILC; TRAP-ASSISTED-TUNNELING;

COMPUTER SIMULATION; DIELECTRIC MATERIALS; EXHIBITIONS; FABRICATION; FLUIDICS; HAFNIUM; HAFNIUM OXIDES; LEAKAGE CURRENTS; NANOTECHNOLOGY; SPICE;

MODELS;

EID: 84864936372     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

1. P. Packan et al., IEDM Tech. Dig. 2009, pp. 659-662.
2. S.H. Lin et al., IEEE Electron Device Lett. 30, 715, 2009.
3. G. Bersuker, et al., IEDM Tech. Dig. 2010, pp. 19.6.1-19.6.4.
4. L. Larcher and A. Padovani, Microelectronics Reliability 50, 1251, 2010.
5. L. Vandelli et al., IEEE Trans. Electron Devices. 58, 2878, 2011.
6. G. Bersuker et al., Solid-State Electronics 65, 146, 2011.
7. N. Yang et al., IEEE Trans. Electron Devices 46, 1464, 1999.
8. C. B. Duke, Tunneling in Solids, New York: Academic, 1969.
9. L. Larcher, IEEE Trans. Electron Devices 50, 1246, 2003.
10. M. V. Fischetti et al., J. Appl. Phys. 90, 4598, 2001.
11. K. Huang and A. Rhys, Proc. R. Soc. Lond. A, Math. Phys. Sci. 204, 406, 1950.
12. A. V. Kimmel, P. V. Sushko, A. L. Shluger, and G. Bersuker, Electrochem. Soc. Trans. 19, 3, 2009.
13. E. H. Poindexter and W. L. Warren, J. Electrochem. Soc. 142, 2508, 1995.
14. D. Muñoz Ramo, J. L. Gavartin, A. L. Shluger, and G. Bersuker, Phys. Rev. B, Condens. Matter 75, 205336, 2007.
15. G. Bersuker et al., Journal of Applied Physics 110, 124518, 2011.
16. C. H. Henry and D. V. Lang, Phys. Rev. B, Condens. Matter 15, 989, 1977.