Leakage current-forming voltage relation and oxygen gettering in HfO x RRAM Devices

IEEE Electron Device Letters

Volumn 34, Issue 6, 2013, Pages 750-752

  Young Fisher, Kristina G ^a   Bersuker, Gennadi ^b   Butcher, Brian ^c   Padovani, Andrea ^d   Larcher, Luca ^d   Veksler, D ^b   Gilmer, David C ^b  

^a IBM MICROELECTRONICS   (United States)

^b SEMATECH   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

^d UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

forming; HfOx; nonvolatile memory; RRAM

Indexed keywords

CONDUCTION PATHS; CONDUCTIVE FILAMENTS; HFOX; NON-VOLATILE MEMORY; OXYGEN DEFICIENCY; RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; RRAM;

FORMING; GRAIN BOUNDARIES; LEAKAGE CURRENTS;

RANDOM ACCESS STORAGE;

EID: 84878326260     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2256101     Document Type: Article

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