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Volumn , Issue , 2013, Pages 85-88

A compact model of hafnium-oxide-based resistive random access memory

Author keywords

Compact Model; Hafnium Oxide; Resistive Switching; RRAM

Indexed keywords

COMPACT MODEL; DEVICE OPERATIONS; DIFFERENT OPERATING CONDITIONS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; RRAM; STOCHASTIC VARIATION;

EID: 84883342733     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICICDT.2013.6563309     Document Type: Conference Paper
Times cited : (35)

References (10)
  • 4
    • 84874651781 scopus 로고    scopus 로고
    • An empirical model for rram resistance in low-and high-resistance states
    • Mar.
    • F. M. Puglisi, L. Larcher, G. Bersuker, A. Padovani, and P. Pavan, "An Empirical Model for RRAM Resistance in Low-and High-Resistance States", IEEE Electron Device Letters, vol. 34, no. 3, pp. 387-389, Mar. 2013.
    • (2013) IEEE Electron Device Letters , vol.34 , Issue.3 , pp. 387-389
    • Puglisi, F.M.1    Larcher, L.2    Bersuker, G.3    Padovani, A.4    Pavan, P.5
  • 5
    • 84866886745 scopus 로고    scopus 로고
    • A SPICE compact model of metal oxide resistive switching memory with variations
    • Oct.
    • X. Guan, S. Yu, and H.-S. P. Wong, "A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations", IEEE Electron Device Letters, vol. 33, no. 10, pp. 1405-1407, Oct. 2012.
    • (2012) IEEE Electron Device Letters , vol.33 , Issue.10 , pp. 1405-1407
    • Guan, X.1    Yu, S.2    Wong, H.-S.P.3
  • 8
    • 84991871387 scopus 로고    scopus 로고
    • Statistical analysis of retention behavior and lifetime prediction of hfox-based RRAM
    • 10-14 April
    • Zhang et al., "Statistical analysis of retention behavior and lifetime prediction of HfOx-based RRAM", Proc. of IEEE IRPS, pp. MY. 8. 1, MY. 8. 5, 10-14 April 2011.
    • (2011) Proc. of IEEE IRPS
    • Zhang1
  • 9
    • 80053196129 scopus 로고    scopus 로고
    • Universal reset characteristics of unipolar and bipolar metal-oxide RRAM
    • Oct.
    • D. Ielmini, F. Nardi, and C. Cagli, "Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM", IEEE Transactions on Electron Devices, vol. 58, no. 10, pp. 3246-3253, Oct. 2011.
    • (2011) IEEE Transactions on Electron Devices , vol.58 , Issue.10 , pp. 3246-3253
    • Ielmini, D.1    Nardi, F.2    Cagli, C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.