-
1
-
-
79959919688
-
Physical mechanism of hfo2-based bipolar resistive random access memory
-
H.-L. Chang, H.-C. Li, C. W. Liu, F. Chen and M.-J. Tsai, "Physical Mechanism of HfO2-based Bipolar Resistive Random Access Memory", IEEE International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), pp. 1-2, 2011.
-
(2011)
IEEE International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
, pp. 1-2
-
-
Chang, H.-L.1
Li, H.-C.2
Liu, C.W.3
Chen, F.4
Tsai, M.-J.5
-
2
-
-
84855306489
-
Metal oxide resistive memory switching mechanism based on conductive filament properties
-
G. Bersuker, D. C. Gilmer, D. Veksler, P. Kirsch, L. Vandelli, A. Padovani, L. Larcher, K. McKenna, A. Shluger, V. Iglesias, M. Porti and M. Nafria, "Metal oxide resistive memory switching mechanism based on conductive filament properties", Journal of Applied Physics, Vol. 110 (12), pp. 124518-124518-12, 2011.
-
(2011)
Journal of Applied Physics
, vol.110
, Issue.12
, pp. 124518-12451812
-
-
Bersuker, G.1
Gilmer, D.C.2
Veksler, D.3
Kirsch, P.4
Vandelli, L.5
Padovani, A.6
Larcher, L.7
McKenna, K.8
Shluger, A.9
Iglesias, V.10
Porti, M.11
Nafria, M.12
-
3
-
-
84856978876
-
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices
-
5-7 Dec.
-
L. Vandelli, A. Padovani, L. Larcher, G. Broglia, G. Ori, M. Montorsi, G. Bersuker, and P. Pavan, "Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices", IEEE International Electron Devices Meeting (IEDM) 2011, pp. 17. 5. 1-17. 5. 4, 5-7 Dec. 2011.
-
(2011)
IEEE International Electron Devices Meeting (IEDM)
, pp. 1751-1754
-
-
Vandelli, L.1
Padovani, A.2
Larcher, L.3
Broglia, G.4
Ori, G.5
Montorsi, M.6
Bersuker, G.7
Pavan, P.8
-
4
-
-
84874651781
-
An empirical model for rram resistance in low-and high-resistance states
-
Mar.
-
F. M. Puglisi, L. Larcher, G. Bersuker, A. Padovani, and P. Pavan, "An Empirical Model for RRAM Resistance in Low-and High-Resistance States", IEEE Electron Device Letters, vol. 34, no. 3, pp. 387-389, Mar. 2013.
-
(2013)
IEEE Electron Device Letters
, vol.34
, Issue.3
, pp. 387-389
-
-
Puglisi, F.M.1
Larcher, L.2
Bersuker, G.3
Padovani, A.4
Pavan, P.5
-
5
-
-
84866886745
-
A SPICE compact model of metal oxide resistive switching memory with variations
-
Oct.
-
X. Guan, S. Yu, and H.-S. P. Wong, "A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations", IEEE Electron Device Letters, vol. 33, no. 10, pp. 1405-1407, Oct. 2012.
-
(2012)
IEEE Electron Device Letters
, vol.33
, Issue.10
, pp. 1405-1407
-
-
Guan, X.1
Yu, S.2
Wong, H.-S.P.3
-
7
-
-
79960002100
-
Modeling of the forming operation in HfO2-based resistive switching memories
-
Monterey (CA), USA, May 22-25
-
L. Vandelli, A. Padovani, L. Larcher, G. Bersuker, D. Gilmer, and P. Pavan, "Modeling of the forming operation in HfO2-based resistive switching memories", 3rd IEEE International Memory Workshop, Monterey (CA), USA, May 22-25, 2011, pp. 119-122.
-
(2011)
3rd IEEE International Memory Workshop
, pp. 119-122
-
-
Vandelli, L.1
Padovani, A.2
Larcher, L.3
Bersuker, G.4
Gilmer, D.5
Pavan, P.6
-
8
-
-
84991871387
-
Statistical analysis of retention behavior and lifetime prediction of hfox-based RRAM
-
10-14 April
-
Zhang et al., "Statistical analysis of retention behavior and lifetime prediction of HfOx-based RRAM", Proc. of IEEE IRPS, pp. MY. 8. 1, MY. 8. 5, 10-14 April 2011.
-
(2011)
Proc. of IEEE IRPS
-
-
Zhang1
-
9
-
-
80053196129
-
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM
-
Oct.
-
D. Ielmini, F. Nardi, and C. Cagli, "Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM", IEEE Transactions on Electron Devices, vol. 58, no. 10, pp. 3246-3253, Oct. 2011.
-
(2011)
IEEE Transactions on Electron Devices
, vol.58
, Issue.10
, pp. 3246-3253
-
-
Ielmini, D.1
Nardi, F.2
Cagli, C.3
-
10
-
-
84883379835
-
Charge transport and degradation in hfo2 and hfox dielectrics
-
in press
-
A. Padovani, L. Larcher, G. Bersuker, and P. Pavan, "Charge Transport and Degradation in HfO2 and HfOx Dielectrics", IEEE Electron Device Letters, (in press).
-
IEEE Electron Device Letters
-
-
Padovani, A.1
Larcher, L.2
Bersuker, G.3
Pavan, P.4
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