Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

Applied Physics Letters

Volumn 105, Issue 4, 2014, Pages

  Wu, Wei ^a   Cao, Yanyan ^a   Caspar, Jonathan V ^a   Guo, Qijie ^a   Johnson, Lynda K ^a   McLean, Robert S ^a   Malajovich, Irina ^a   Choudhury, Kaushik Roy ^a  

^a DUPONT COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OPEN CIRCUIT VOLTAGE;

ADMITTANCE SPECTROSCOPIES; CAPACITANCE PROFILING; CURRENT VOLTAGE; DIELECTRIC LAYER; INTERFACE RECOMBINATION; PASSIVATION LAYER; PHOTOVOLTAIC DEVICES; SURFACE PASSIVATION;

ATOMIC LAYER DEPOSITION;

EID: 84905040886     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4891852     Document Type: Article

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