A comparative study of defect states in evaporated and selenized CIGS(S) solar cells

Progress in Photovoltaics: Research and Applications

Volumn 13, Issue 7, 2005, Pages 579-586

  Johnson, P K ^a,d   Heath, J T ^b,e   Cohen, J D ^b   Ramanathan, K ^c   Sites, J R ^a  

^a Department of Ecosystem Science and Sustainability   (United States)

^b UNIVERSITY OF OREGON   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^d BALL AEROSPACE AND TECHNOLOGIES CORP   (United States)

^e LINFIELD COLLEGE   (United States)

Author keywords

AS; Carrier density; Cd PE; CIGS(S); Defects; DLCP; Polycrystalline; Solar cells

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; COPPER COMPOUNDS; ELECTRIC ADMITTANCE; ELECTRIC POTENTIAL; ELECTROLYTES; POLYCRYSTALLINE MATERIALS; SURFACE TREATMENT;

CD PE; CIGS (S); DLCP; PROFILING MEASUREMENTS;

SOLAR CELLS;

EID: 27144435882     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/pip.619     Document Type: Article

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