A comparative study of defect states in evaporated and selenized CIGS(S) solar cells

Progress in Photovoltaics: Research and Applications

Volumn 13, Issue 7, 2005, Pages 579-586

  Johnson, P K ^a,d   Heath, J T ^b,e   Cohen, J D ^b   Ramanathan, K ^c   Sites, J R ^a  

^a Veterinary Dentistry and Oral Surgery   (United States)

^b UNIVERSITY OF OREGON   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^d BALL AEROSPACE AND TECHNOLOGIES CORP   (United States)

^e LINFIELD COLLEGE   (United States)

Author keywords

AS; Carrier density; Cd PE; CIGS(S); Defects; DLCP; Polycrystalline; Solar cells

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; COPPER COMPOUNDS; ELECTRIC ADMITTANCE; ELECTRIC POTENTIAL; ELECTROLYTES; POLYCRYSTALLINE MATERIALS; SURFACE TREATMENT;

CD PE; CIGS (S); DLCP; PROFILING MEASUREMENTS;

SOLAR CELLS;

EID: 27144435882     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/pip.619     Document Type: Article

References (18)

1. 2-based solar cells: processing of novel absorber structures. Proceedings of the 24th IEEE Photovoltaics Specialists Conference, 1994; 68-75.
2. 3 precursor films. Applied Physics Letters 1994; 65: 198-200.
3. 2. Proceedings of the 23rd IEEE Photovoltaics Specialists Conference, 1993; 372-378.
4. Shafarman W, Stolt L. In Handbook of Photovoltaic Science and Engineering, Luque A, Hegedus S (eds). Wiley: Chichester, 2003; 583.
5. 2 solar cells. Solid State Communications 1998; 107: 59-63.
6. 2 chalcopyrite semiconductors. Proceedings of the 16th European Photovoltaic Solar Energy Conference, 2000; 304-308.
7. 2-based heterojunction solar cells. Part II. Defect spectroscopy. Journal of Applied Physics 2000; 87: 594-602.
8. 2 thin film solar cells without intermediate buffer layers. Proceedings of the 2nd World Photovoltaic Solar Energy Conference, 1998; 477-481.
9. Ramanathan K et al. Properties of Cd and Zn partial electrolyte treated CIGS solar cells. Proceedings of the 29th IEEE Photovoltaics Specialists Conference, 2002; 523-526.
10. Losee D. Admittance spectroscopy of impurity levels in Schottky barriers. Journal of Applied Physics 1975; 46: 2204-2214.
11. 2 based heterojunctions. Journal of Applied Physics 1996; 80: 4411-4420.
12. 2 solar cells by temperature dependent admittance measurements. Proceedings of the 13th European Photovoltaic Solar Energy Conference, 1995; 1969-1972.
13. Cohen D. Density of states from junction measurements. In Semiconductors and Semimetals: Hydrogenated Amorphous Silicon, Vol. 21C, Pankove J (ed.). Academic: New York; 1984; 9-98.
14. Pautrat J et al. Admittance spectroscopy: a powerful characterization technique for semiconductor crystals-application to ZnTe. Solid State Electronics 1980; 23: 1159-1169.
15. Kimerling L. Influence of deep traps on the measurement of free-carrier distributions in semiconductors by junction capacitance techniques. Journal of Applied Physics 1974; 45: 1839-1845.
16. Heath J, Cohen D, Shafarman W. The study of bulk and metastable defects in copper indium gallium diselenide thin films using drive-level capacitance profiling. Journal of Applied Physics 2004; 95: 1000.
17. Michelson C, Gelatos A, Cohen D. Drive-level capacitance profiling: its application to determining gap state densities in hydrogenated silicon films. Applied Physics Letters 1985; 47: 412-414.
18. 2 alloy system. Journal of Applied Physics 2002; 91: 1391-1399.