Electronic properties of the Cu 2ZnSn(Se,S) 4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods

Applied Physics Letters

Volumn 100, Issue 25, 2012, Pages

  Gunawan, Oki ^a   Gokmen, Tayfun ^a   Warren, Charles W ^b   Cohen, J David ^b   Todorov, Teodor K ^a   Barkhouse, D Aaron R ^a   Bag, Santanu ^a   Tang, Jiang ^a   Shin, Byungha ^a   Mitzi, David B ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b UNIVERSITY OF OREGON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER LAYERS; ADMITTANCE SPECTROSCOPIES; BULK PROPERTIES; CU(IN ,GA)(S ,SE)2; FILL FACTOR; FREEZE OUT; GEOMETRIC CAPACITANCE; INTERMEDIATE TEMPERATURES; LOW FREQUENCY; LOW TEMPERATURES;

CAPACITANCE; ELECTRONIC PROPERTIES;

ENERGY GAP;

EID: 84863324703     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4729751     Document Type: Article

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