Defect studies in Cu2ZnSnSe4 and Cu 2ZnSn(Se0.75S0.25)4 by admittance and photoluminescence spectroscopy

Materials Science in Semiconductor Processing

Volumn 16, Issue 3, 2013, Pages 992-996

  Kask, E ^a   Grossberg, M ^a   Josepson, R ^a   Salu, P ^a   Timmo, K ^a   Krustok, J ^a  

^a TALLINN UNIVERSITY OF TECHNOLOGY   (Estonia)

Author keywords

Admittance spectroscopy; Cu2ZnSn(Se0.75S 0.25)4; Cu2ZnSnSe4; Defects; Photoluminescence spectroscopy

Indexed keywords

ADMITTANCE SPECTROSCOPIES; DEFECT LEVELS; FREQUENCY RANGES; LOW TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPIES; MEASUREMENT TEMPERATURES; MONOGRAIN LAYERS; PL MEASUREMENTS; RECORD EFFICIENCIES;

ELECTRIC ADMITTANCE; HETEROJUNCTIONS; PHOTOLUMINESCENCE SPECTROSCOPY;

DEFECTS;

EID: 84877584075     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2013.02.009     Document Type: Article

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