Resistive switching of in situ and ex situ oxygen plasma treated ZnO thin film deposited by atomic layer deposition

Applied Physics A: Materials Science and Processing

Volumn 116, Issue 2, 2014, Pages 663-669

  Zhang, Jian ^a   Yang, Hui ^a   Zhang, Qilong ^a   Jiang, Hao ^a   Luo, Jikui ^a   Zhou, Juehui ^a   Dong, Shurong ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DEPOSITION; GLASS CERAMICS; METALLIC FILMS; OPTICAL FILMS; OXYGEN; PLASMA APPLICATIONS; SWITCHING SYSTEMS;

CHEMICAL COMPOSITIONS; CONDUCTING FILAMENT; CONDUCTION MECHANISM; HYDROGEN IMPURITY; OXYGEN PLASMA TREATMENTS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SPACE CHARGE LIMITED CURRENTS;

ATOMIC LAYER DEPOSITION;

EID: 84904469940     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-014-8324-4     Document Type: Article

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