Charge spill-out and work function of few-layer graphene on SiC(0 0 0 1)

Journal of Physics D: Applied Physics

Volumn 47, Issue 29, 2014, Pages

  Renault, O ^a   Pascon, A M ^b   Rotella, H ^a,d   Kaja, K ^a,e   Mathieu, C ^c   Rault, J E ^c,f   Blaise, P ^a   Poiroux, T ^a   Barrett, N ^c   Fonseca, L R C ^b  

^a CEA GRENOBLE   (France)

^b UNIVERSITY OF CAMPINAS   (Brazil)

^c SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ   (France)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^e ETH ZURICH   (Switzerland)

^f SYNCHROTRON SOLEIL   (France)

Author keywords

ab initio simulation; graphene; silicon carbide; work function; XPEEM

Indexed keywords

BINDING ENERGY; CALCULATIONS; CHARGE TRANSFER; EXPERIMENTS; GRAPHENE; SILICON CARBIDE; VACUUM;

AB INITIO DENSITY FUNCTIONAL THEORIES (DFT); AB INITIO SIMULATIONS; BINDING ENERGY SHIFTS; ELECTRON TRANSFER; FEW-LAYER GRAPHENE; WORK FUNCTION MODULATION; X-RAY PHOTOELECTRON EMISSION MICROSCOPIES; XPEEM;

WORK FUNCTION;

EID: 84903706490     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/47/29/295303     Document Type: Article

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