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Volumn 98, Issue 18, 2011, Pages

Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire

(7) Vo Van, Chi a Kimouche, Amina a Reserbat Plantey, Antoine a Fruchart, Olivier a Bayle Guillemaud, Pascale b Bendiab, Nedjma a Coraux, Johann a

a LABORATOIRE DE CRISTALLOGRAPHIE (France)

b CEA GRENOBLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SINGLE CRYSTALS; CRYSTALLOGRAPHIC ORIENTATIONS; EPITAXIAL GRAPHENE; GRAPHENE LAYERS; LOW DENSITY; METAL THIN FILM; SAPPHIRE WAFER; SCANNING TUNNELLING MICROSCOPY; SINGLE LAYER; STRUCTURAL QUALITIES;

CHEMICAL VAPOR DEPOSITION; EPITAXIAL FILMS; FILM PREPARATION; GRAPHENE; IRIDIUM; PULSED LASER DEPOSITION; RAMAN SPECTROSCOPY; SAPPHIRE; SCANNING TUNNELING MICROSCOPY;

SINGLE CRYSTALS;

EID: 79957479581 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3585126 Document Type: Article

Times cited : (78)

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