Variation of leakage mechanism and potential barrier in la and Ru co-doped BiFeO3 thin films

Journal of Physics D: Applied Physics

Volumn 44, Issue 43, 2011, Pages

  Yan, Feng ^a,c   Lai, Man On ^a   Lu, Li ^a   Zhu, Tie Jun ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b ZHEJIANG UNIVERSITY   (China)

^c Drexel University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CO-DOPED; CURRENT MECHANISMS; DOMAIN STRUCTURE; DOMINANT MECHANISM; ELECTRODE INTERFACE; HIGH TEMPERATURE; LEAKAGE MECHANISM; LOW TEMPERATURES; POOLE-FRENKEL; POTENTIAL BARRIERS; SPACE-CHARGE-LIMITED CURRENT;

DIELECTRIC PROPERTIES; ELECTRIC FIELDS; FREONS; NUCLEAR PHYSICS; PULSED LASER DEPOSITION;

FERROELECTRIC FILMS;

EID: 80055078979     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/43/435302     Document Type: Article

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