Phonon-assisted photoluminescence in wurtzite GaN epilayer

Semiconductor Science and Technology

Volumn 13, Issue 7, 1998, Pages 769-772

  Liu, W ^a   Li, M F ^a   Xu, S J ^b   Uchida, Kazuo ^c   Matsumoto, Koh ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^d TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; EXCITONS; PHONONS; PHOTOLUMINESCENCE; THERMAL EFFECTS;

PHONON ASSISTED PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM NITRIDE; TEMPERATURE DEPENDENT PHOTOLUMINESCENCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032119205     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/7/018     Document Type: Article

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