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Applied Physics Letters

Volumn 95, Issue 6, 2009, Pages

Probing exciton-phonon interaction in AlN epilayers by photoluminescence

(4) Sedhain, A a Li, J a Lin, J Y a Jiang, H X a

a Department of Electrical and Computer Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; COUPLING CONSTANTS; DEEP ULTRAVIOLET; ELECTRICAL FIELD; ELECTRON MASS; EMITTED LIGHT; EXCITON-PHONON COUPLINGS; EXCITON-PHONON INTERACTIONS; FREE EXCITONS; HUANG-RHYS FACTORS; LARGE EFFECTIVE; LO PHONONS; LONGITUDINAL OPTICAL PHONONS; PL EMISSION; PL MEASUREMENTS; WURTZITES;

EMISSION SPECTROSCOPY; EXCITONS; GALLIUM NITRIDE; LIGHT TRANSMISSION; PHOTOLUMINESCENCE; POLARIZATION; SEMICONDUCTING GALLIUM; ZINC SULFIDE;

PHONONS;

EID: 69049102119 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3206672 Document Type: Article

Times cited : (24)

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