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Applied Physics Letters

Volumn 96, Issue 6, 2010, Pages

Molecular beam epitaxy growth and optical properties of AlN nanowires

(7) Landr O a Fellmann, V a Jaffrennou, P a Bougerol, C a Renevier, H b Cros, A c Daudin, B a

a CEA GRENOBLE (France)

b GRENOBLE INSTITUTE OF TECHNOLOGY (France)

c UNIVERSITY OF VALENCIA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; OPTICAL PROPERTIES; SILICA;

ALN NANOWIRE; AMORPHOUS SIO2; CATALYST-FREE; ELASTIC STRAIN RELAXATION; NEAR BAND EDGE EMISSIONS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; SIO2/SI(100); VOLMER-WEBER GROWTH MODE;

NITROGEN COMPOUNDS;

EID: 76749095545 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3315943 Document Type: Article

Times cited : (57)

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