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Volumn 113, Issue 23, 2013, Pages

Accurate determination of optical bandgap and lattice parameters of Zn 1-xMgxO epitaxial films (0 ≤ x ≤ 0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire

(6) Laumer, Bernhard a,b Schuster, Fabian a Stutzmann, Martin a Bergmaier, Andreas c Dollinger, Günther c Eickhoff, Martin b

a WALTER SCHOTTKY INSTITUT (Germany)

b JUSTUS LIEBIG UNIVERSITY (Germany)

c BUNDESWEHR UNIVERSITY MUNICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION MEASUREMENTS; ELASTIC RECOIL DETECTION ANALYSIS; ELECTRON-HOLE INTERACTIONS; LINEAR RELATIONSHIPS; MG CONCENTRATIONS; PHOTOLUMINESCENCE EMISSION; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; PRECISE DETERMINATIONS;

ENERGY GAP; EPITAXIAL FILMS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SAPPHIRE; ZINC;

EPITAXIAL GROWTH;

EID: 84880782948 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4811693 Document Type: Article

Times cited : (26)

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