p-n Junctions in molybdenum ditelluride

Physica Status Solidi (A) Applied Research

Volumn 157, Issue 1, 1996, Pages 205-209

  Bernede J C ^a   Kettaf, M ^a   Khelil, A ^b   Spiesser, M ^a  

^a UNIVERSITÉ DE NANTES   (France)

^b UNIVERSITY OF ORAN   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); MOLYBDENUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SINGLE CRYSTALS; VOLTAGE MEASUREMENT;

MOLYBDENUM DITELLURIDE; THERMIONIC EMISSION; THERMIONIC RECOMBINATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0030233104     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211570126     Document Type: Article

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