SCOPUS 정보 검색 플랫폼

Volumn 2, Issue 22, 2014, Pages 4401-4405

Amorphous zinc-doped silicon oxide (SZO) resistive switching memory: Manipulated bias control from selector to memristor

(8) Huang, Jian Shiou a Yen, Wen Chun a Lin, Shih Ming a Lee, Chi Yung a Wu, Jiang c Wang, Zhiming M c Chin, Tsung Shune b Chueh, Yu Lun a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b FENG CHIA UNIVERSITY (Taiwan)

c INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; MEMRISTORS; NANOCLUSTERS; PASSIVE FILTERS; SEMICONDUCTOR DOPING; SILICON OXIDES; ZINC OXIDE;

BIAS CONTROL; MEMRISTOR; RESISTANCE RATIO; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY; TRANSPORT MECHANISM; VOLTAGE-CONTROLLED; WORKING MECHANISMS;

ZINC;

EID: 84900863371 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c3tc32166e Document Type: Article

Times cited : (21)

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