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Applied Physics Letters

Volumn 95, Issue 16, 2009, Pages

Electrical resistance switching in Ti added amorphous SiOx

(4) Lin, Ting Yi a Chen, Li Ming a Chang, Shih Ching a Chin, Tsung Shune a,b

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b FENG CHIA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER-ELECTRON SPECTRA; ELECTRICAL RESISTANCES; ELECTRICAL RESISTIVITY; INTERFACE OXIDE; METAL ELECTRODES; OPERATION VOLTAGE; SI(1 0 0); ULTRA-THIN; UNIPOLAR SWITCHING; X-RAY PHOTOELECTRONS;

ALUMINUM; ELECTRIC CONDUCTIVITY; ELECTRODES; PHOTOELECTRON SPECTROSCOPY; PLATINUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TIN OXIDES; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

SWITCHING;

EID: 70350423025 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3243983 Document Type: Article

Times cited : (16)

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