Electrode effect on resistive switching of Ti-added amorphous SiO x films

Thin Solid Films

Volumn 518, Issue 24, 2010, Pages 7352-7355

  Chen, Li Ming ^a   Lin, Ting Yi ^a   Chang, Chih Chung ^a   Chang, Shih Chin ^a   Chin, Tsung Shune ^a,b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Amorphous SiOx; Filamentary conduction; Resistive switching; RRAM; Ti addition

Indexed keywords

AMORPHOUS SIOX; FILAMENTARY CONDUCTION; RESISTIVE SWITCHING; RRAM; TI-ADDITION;

COPPER; PLATINUM; SWITCHING; SWITCHING SYSTEMS;

SILICON COMPOUNDS;

EID: 77956875666     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.04.111     Document Type: Conference Paper

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