Forming-free bipolar memristive switching of ZnO films deposited by cyclic-voltammetry

Electrochimica Acta

Volumn 91, Issue , 2013, Pages 62-68

  Huang, Jian Shiou ^a   Lee, Chi Young ^a   Chin, Tsung Shune ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Cyclic voltammetry deposition; Electrodeposited zinc oxide; Memristive switching

Indexed keywords

AUGER ELECTRON; BIPOLAR SWITCHING; CHEMICAL BONDINGS; CONCENTRATION PROFILES; CONDUCTION MECHANISM; CYCLE LIVES; ELECTRICAL CONDUCTION; ELECTRICAL SWITCHING; ELECTROCHEMICAL DEPOSITION; INDIUM TIN OXIDE; LOW VOLTAGES; OXYGEN BONDING; SPACE-CHARGE-LIMITED CURRENT; ZNO; ZNO FILMS;

CHEMICAL BONDS; DEPOSITS; ELECTRODEPOSITION; ELECTRON SPECTROSCOPY; FILM PREPARATION; ITO GLASS; METALLIC FILMS; OXYGEN; REDUCTION; SWITCHING; ZINC OXIDE;

CYCLIC VOLTAMMETRY;

EID: 84872790672     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2012.12.030     Document Type: Article

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