An ultra clean self-aligned process for high maximum oscillation frequency graphene transistors

Carbon

Volumn 75, Issue , 2014, Pages 249-254

  Feng, Z H ^a   Yu, C ^a   Li, J ^a   Liu, Q B ^a   He, Z Z ^a   Song, X B ^a   Wang, J J ^a   Cai, S J ^a  

^a HEBEI SEMICONDUCTOR RESEARCH INSTITUTE   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF FREQUENCY; FABRICATION; TRANSISTORS;

FUTURE APPLICATIONS; GRAPHENE TRANSISTORS; HIGH-FREQUENCY ELECTRONICS; MAXIMUM OSCILLATION FREQUENCY; PROTECTION LAYERS; RADIO FREQUENCY CIRCUIT; SELF ALIGNED PROCESS; SELF-ALIGNED FABRICATIONS;

GRAPHENE;

EID: 84900806681     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2014.03.060     Document Type: Article

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