Buffer layer induced band gap and surface low energy optical phonon scattering in epitaxial graphene on SiC(0001)

Applied Physics Letters

Volumn 102, Issue 1, 2013, Pages

  Yu, C ^a   Li, J ^a   Liu, Q B ^a   Dun, S B ^a   He, Z Z ^a   Zhang, X W ^a   Cai, S J ^a   Feng, Z H ^a  

^a HEBEI SEMICONDUCTOR RESEARCH INSTITUTE   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSPORTATION; ELECTRICAL CONDUCTIVITY; EPITAXIAL GRAPHENE; FITTING RESULTS; HALL MEASUREMENTS; OPTICAL PHONON SCATTERING; SIC SUBSTRATES; TEMPERATURE DEPENDENT;

BUFFER LAYERS; ELECTRIC CONDUCTIVITY; ENERGY GAP; EPITAXIAL GROWTH; PHONON SCATTERING; SILICON; SILICON CARBIDE;

GRAPHENE;

EID: 84872309511     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773568     Document Type: Article

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