Self-aligned fabrication of graphene rf transistors with t-shaped gate

ACS Nano

Volumn 6, Issue 4, 2012, Pages 3371-3376

  Badmaev, Alexander ^a   Che, Yuchi ^a   Li, Zhen ^a   Wang, Chuan ^a   Zhou, Chongwu ^a  

^a University of Southern California ^*  (United States)

Author keywords

graphene; mushroom gate; self aligned fabrication; T shaped gate; transistors

Indexed keywords

ACCESS RESISTANCE; CHANNEL LENGTH; E-BEAM LITHOGRAPHY; EXCELLENT PERFORMANCE; GRAPHENE TRANSISTORS; MAXIMUM OSCILLATION FREQUENCY; MUSHROOM GATE; PEAK CURRENT DENSITY; PEAK TRANSCONDUCTANCE; SCALABLE METHODS; SELF-ALIGNED; SHADOW MASK; SOURCE AND DRAINS; T-SHAPED GATE; TOP GATE; TRANSISTOR DESIGNS; WAFER-SCALE;

CHEMICAL VAPOR DEPOSITION; DESIGN; ELECTRONIC PROPERTIES; FABRICATION; HETEROJUNCTION BIPOLAR TRANSISTORS; SCALABILITY; TRANSCONDUCTANCE; TRANSISTORS;

GRAPHENE;

EID: 84860381292     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn300393c     Document Type: Article

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