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Volumn 104, Issue 16, 2014, Pages

Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT; ATOMIC LAYER DEPOSITION; BAND STRUCTURE; COMPOSITE FILMS; HAFNIUM OXIDES; OPTOELECTRONIC DEVICES; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84900324976     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4872175     Document Type: Article
Times cited : (49)

References (29)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.