Valence-band offset of p-NiO/n-ZnO heterojunction measured by X-ray photoelectron spectroscopy

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 375, Issue 16, 2011, Pages 1760-1763

  Yang, Zhi Guo ^a   Zhu, Li Ping ^a   Guo, Yan Min ^a   Tian, Wei ^a   Ye, Zhi Zhen ^a   Zhao, Bing Hui ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

NiO ZnO heterojunction; Valence band offset; X ray photoelectron spectroscopy

Indexed keywords

ENERGY GAP; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; NICKEL OXIDE; PHOTOELECTRONS; PHOTONS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

CONDUCTION BAND OFFSET; QUARTZ SUBSTRATE; RADIO FREQUENCY MAGNETRON SPUTTERING; TYPE II BAND ALIGNMENTS; VALENCE BAND OFFSETS;

VALENCE BANDS;

EID: 79953287956     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2011.03.021     Document Type: Article

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