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Journal of Applied Physics

Volumn 101, Issue 11, 2007, Pages

ZnO-based p-i-n and n-i-p heterostructure ultraviolet sensors: A comparative study

(3) Wang, Kai a Vygranenko, Yuriy a Nathan, Arokia b

a UNIVERSITY OF WATERLOO (Canada)

b UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DARK CURRENTS; HETEROJUNCTIONS; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; ULTRAVIOLET RADIATION; ZINC OXIDE;

DARK CURRENT TRANSIENTS; FORWARD BIAS CURRENT VOLTAGE CHARACTERISTICS; HETEROSTRUCTURE ULTRAVIOLET SENSORS; ULTRAVIOLET DETECTION;

SENSORS;

EID: 34250686703 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2739219 Document Type: Article

Times cited : (26)

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