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Applied Physics Letters

Volumn 95, Issue 16, 2009, Pages

Band offsets of HfO2 /ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation

(7) Chen, Q a Yang, M a Feng, Y P a Chai, J W b Zhang, Z b Pan, J S b Wang, S J b

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; BAND OFFSETS; CONDUCTION BAND OFFSET; FIRST-PRINCIPLES CALCULATION; HIGH QUALITY; IN-SITU; INTERFACE STRUCTURES; VALENCE-BAND OFFSET; X RAY PHOTOEMISSION SPECTROSCOPY; ZNO;

EMISSION SPECTROSCOPY; HAFNIUM COMPOUNDS; HETEROJUNCTIONS; PHOTOELECTRICITY; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70350375688 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3253420 Document Type: Article

Times cited : (31)

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