The MOVPE growth mechanism of catalyst-free self-organized GaN columns in H2 and N2 carrier gases

Journal of Crystal Growth

Volumn 384, Issue , 2013, Pages 61-65

  Wang, Xue ^a   Jahn, Uwe ^b   Ledig, Johannes ^a   Wehmann, Hergo H ^a   Mandl, Martin ^a,c   Straßburg, Martin ^c   Waag, Andreas ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

A1. Growth mechanism; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B2. Semiconducting III V materials

Indexed keywords

CHOICE OF CARRIER; COLUMNAR STRUCTURES; ELECTRONIC DEVICE; GROWTH MECHANISMS; II-IV SEMICONDUCTORS; METAL-ORGANIC VAPOR PHASE EPITAXY; SAPPHIRE SUBSTRATES; SEMI CONDUCTING III-V MATERIALS;

CATALYSTS; DROPS; EPITAXIAL GROWTH; GALLIUM NITRIDE; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTOR DOPING; VAPORS;

NITROGEN;

EID: 84885162545     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.09.015     Document Type: Article

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