Selective area growth of GaN rod structures by MOVPE: Dependence on growth conditions

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2318-2320

  Li, Shunfeng ^a   Fündling, Sönke ^a   Wang, Xue ^a   Erenburg, Milena ^a   Al Suleiman, Mohamed Aid Mansur ^a   Wei, Jiandong ^a   Bergbauer, Werner ^a,b   Strassburg, Martin ^b   Wehmann, Hergo Heinrich ^a   Waag, Andreas ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

GaN; MOVPE; Selective area growth

Indexed keywords

CONTINUOUS-FLOW; GAN; GROWTH CONDITIONS; GROWTH SPECIES; HIGHER TEMPERATURES; NITRIDATION TIME; NOVEL APPLICATIONS; ROD STRUCTURE; SELECTIVE AREA GROWTH; TOP SURFACE; V/III RATIO;

ASPECT RATIO; NANOPHOTONICS; NANORODS;

GALLIUM NITRIDE;

EID: 79960720051     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201001003     Document Type: Article

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