Quantum mechanical study of the germanium electron-hole bilayer tunnel FET

IEEE Transactions on Electron Devices

Volumn 60, Issue 9, 2013, Pages 2754-2760

  Alper, Cem ^a   Lattanzio, Livio ^a   De Michielis, Luca ^a,b   Palestri, Pierpaolo ^c   Selmi, Luca ^c   Ionescu, Adrian Mihai ^a  

^a EPFL   (Switzerland)

^b ETH ZURICH   (Switzerland)

^c UNIVERSITY OF UDINE   (Italy)

Author keywords

2 D 2 D tunneling; band to band tunneling (BTBT); density of states (DOS); electron hole bilayer tunnel field effect transistor (EHBTFET); germanium; quantum mechanical (QM) simulation; subthreshold slope; tunnel field effect transistor (TFET)

Indexed keywords

BAND TO BAND TUNNELING; DENSITY OF STATE; ELECTRONHOLE BILAYER TUNNEL FIELD-EFFECT TRANSISTORS (EHBTFET); QUANTUM MECHANICAL SIMULATIONS; SUBTHRESHOLD SLOPE; TUNNEL FIELD-EFFECT TRANSISTORS (TFET);

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRONS; GERMANIUM; QUANTUM ELECTRONICS;

FIELD EFFECT TRANSISTORS;

EID: 84883302327     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2274198     Document Type: Article

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