Tunneling and occupancy probabilities: How do they affect tunnel-FET behavior?

IEEE Electron Device Letters

Volumn 34, Issue 6, 2013, Pages 726-728

  De Michielis, Luca ^a,b   Lattanzio, Livio ^a   Moselund, Kirsten E ^b   Riel, Heike ^b   Ionescu, Adrian M ^a  

^a EPFL   (Switzerland)

^b IBM RESEARCH ZURICH   (Switzerland)

Author keywords

Band to band tunneling; low power electronics; steep subthreshold swing device; tunnel FET; tunneling

Indexed keywords

BAND TO BAND TUNNELING; FERMI-DIRAC DISTRIBUTION; HIGH-ENERGY SOURCES; INTERBAND TUNNELING; STEEP SUBTHRESHOLD SWINGS; SUBTHRESHOLD SWING; TUNNEL FET; TUNNELING PROBABILITIES;

POWER ELECTRONICS; PROBABILITY DISTRIBUTIONS;

ELECTRON TUNNELING;

EID: 84878295552     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2257665     Document Type: Article

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