Enhanced tunneling current in 1d-1d Edge overlapped TFET's

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2012, Pages 63-64

  Agarwal, Sapan ^a   Yablonovitch, Eli ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; OPERATING VOLTAGE; TUNNELING CURRENT; TUNNELING FIELD-EFFECT TRANSISTORS;

EID: 84866900011     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2012.6256926     Document Type: Conference Paper

References (3)

1. S. Agarwal E. Yablonovitch, 69th Annual Device Research Conference, pp. 199-200, June 2011
2. S. Agarwal E. Yablonovitch, submitted to Physics Review B, ar Xiv: 1109.0096 [cond-mat.mes-hall]
3. B. A. Foreman, Physical Review B, vol 59, pp. 12748-12751, Nov 1997