Impact of quantization energy and gate leakage in bilayer tunneling transistors

IEEE Electron Device Letters

Volumn 34, Issue 2, 2013, Pages 298-300

  Teherani, James T ^a   Agarwal, Sapan ^b   Yablonovitch, Eli ^b   Hoyt, Judy L ^a   Antoniadis, Dimitri A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Electron hole bilayer; leakage currents; quantization; tunneling; tunneling field effect transistor (TFET); tunneling transistors

Indexed keywords

BAND TO BAND TUNNELING; BI-LAYER; CONFINEMENT ENERGY; DESIGN LIMITS; DOUBLE-GATE; EIGEN STATE; ELECTRON-HOLE BILAYERS; GATE LEAKAGES; GATE-LEAKAGE CURRENT; INTRINSIC SEMICONDUCTORS; QUANTIZATION; QUANTIZATION ENERGY; QUANTUM MECHANICAL CONFINEMENT; SOURCE-DRAIN CURRENT; THIN BODY; TUNNELING FIELD-EFFECT TRANSISTORS; TUNNELING PROBABILITIES; VERTICAL ELECTRIC FIELDS;

ELECTRIC FIELDS; ELECTRON TUNNELING; GATE DIELECTRICS; LEAKAGE CURRENTS; QUANTUM THEORY;

TRANSISTORS;

EID: 84873060889     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2229458     Document Type: Article

References (8)

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