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Volumn 95, Issue 4, 2009, Pages

Effect of bias stress on mechanically strained low temperature polycrystalline silicon thin film transistor on stainless steel substrate

(3) Peng, I Hsuan a Liu, Po Tsun b Wu, Tai Bor a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STRESS; COMPRESSIVE STRAIN; CURVATURE RADII; DC BIAS; DEVICE DEGRADATION; DRAIN ELECTRODES; FLEXIBLE DISPLAYS; LATTICE ARRANGEMENTS; LOW TEMPERATURE POLYCRYSTALLINE SILICON; LOW TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS; LTPS-TFT; MECHANICAL STRAIN; METAL FOIL SUBSTRATES; POLY-SI TFTS; STAINLESS STEEL SUBSTRATES; TENSILE MECHANICAL STRAIN; TRAP DENSITY;

ELECTRIC FIELDS; ELECTRIC POTENTIAL; HOLE MOBILITY; METAL FOIL; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; STAINLESS STEEL; THIN FILM TRANSISTORS; THIN FILMS;

TENSILE STRAIN;

EID: 68249130420 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3193654 Document Type: Article

Times cited : (26)

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