Density-of-states modeling of solution-processed InGaZnO thin-film transistors

IEEE Electron Device Letters

Volumn 31, Issue 10, 2010, Pages 1131-1133

  Kim, Chang Eun ^a   Cho, Edward Namkyu ^a   Moon, Pyung ^a   Kim, Gun Hee ^a   Kim, Dong Lim ^a   Kim, Hyun Jae ^a   Yun, Ilgu ^a  

^a Yonsei University   (South Korea)

Author keywords

Density of states (DOS); InGaZnO (IGZO); modeling; thin film transistors (TFTs)

Indexed keywords

DENSITY OF STATE; DENSITY-OF-STATES; DEVICE MODELING; GA CONTENT; INGAZNO (IGZO); MODELING; PEAK VALUES; SOL-GEL METHODS; SOLUTION-PROCESSED;

FILM PREPARATION; GALLIUM; PHYSICAL VAPOR DEPOSITION; SOL-GEL PROCESS;

THIN FILM TRANSISTORS;

EID: 77957598924     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2061832     Document Type: Article

References (11)

1. T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, "Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system," Appl. Phys. Lett., vol.90, no.24, p. 242 114, Jun. 2007.
2. J. K. Jeong, J. H. Jeong, H. W. Yang, J.-S. Park, Y.-G. Mo, and H. D. Kim, "High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel," Appl. Phys. Lett., vol.91, no.11, p. 113 505, Sep. 2007.
3. 4 thin film transistors and their subgap density of states," Appl. Phys. Lett., vol.92, no.13, p. 133 503, Apr. 2008.
4. G. H. Kim, B. D. Ahn, S. Shin, W. H. Jeong, H. J. Kim, and H. J. Kim, "Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors," Appl. Phys. Lett., vol.94, no.23, p. 233 501, Jun. 2009.
5. D. Kim, C. Y. Koo, K. Song, Y. Jeong, and J. Moon, "Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors," Appl. Phys. Lett., vol.95, no.10, p. 103 501, Sep. 2009.
6. J.-H. Park, K. Jeon, S. Lee, S. Kim, S. Kim, I. Song, C. J. Kim, J. Park, Y. Park, D. M. Kim, and D. H. Kim, "Extraction of density of states in amorphous GaInZnO thin-film transistors by combining an optical charge pumping and capacitance-voltage characteristics," IEEE Electron Device Lett., vol.29, no.12, pp. 1292-1295, Dec. 2008.
7. K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, "Subgap states in transparent amorphous oxide semiconductor, In-Ga-Zn-O, observed by bulk sensitive X-ray photoelectron spectroscopy," Appl. Phys. Lett., vol.92, no.20, p. 202 114, May 2008.
8. N. L. Dehuff, E. S. Kettenring, D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C.-H. Park, and D. A. Keszler, "Transparent thin-film transistors with zinc indium oxide channel layer," J. Appl. Phys., vol.97, no.6, p. 064 505, Mar. 2005.
9. H. Hosono, "Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application," J. Non-Cryst. Solids, vol.352, no.9, pp. 851-858, Apr. 2006.
10. D.-Y. Cho, J. Song, K. D. Na, C. S. Hwang, J. H. Jeong, J. K. Jeong, and Y.-G. Mo, "Local structure and conduction mechanism in amorphous In-Ga-Zn-O films," Appl. Phys. Lett., vol.94, no.11, p. 112 112, Mar. 2009.
11. K. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, "Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations," Phys. Rev. B, Condens. Matter, vol.75, no.3, p. 035 212, Jan. 2007.