Effects of mechanical strain on amorphous silicon thin-film transistor electrical stability

Applied Physics Letters

Volumn 102, Issue 23, 2013, Pages

  Chow, M J ^a   Fomani, A A ^b   Moradi, M ^b   Chaji, G ^c   Lujan, R A ^d   Wong, W S ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

^b Massachusetts Institute of Technology   (United States)

^c IGNIS Innovation Inc   (Canada)

^d PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON THIN-FILM TRANSISTOR; AMORPHOUS SILICON THIN-FILM TRANSISTORS (A-SI:H TFTS); CHARGE DE-TRAPPING; COMPRESSION AND TENSION; ELECTRICAL STABILITY; FLEXIBLE SUBSTRATE; MECHANICAL BENDING; MECHANICAL STRAIN;

SEMICONDUCTING ORGANIC COMPOUNDS; SILICON; THIN FILM TRANSISTORS;

AMORPHOUS SILICON;

EID: 84879068580     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4811271     Document Type: Article

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