Mechanically flexible low-leakage nanocomposite gate dielectrics for flexible organic thin-film transistors

Electrochemical and Solid-State Letters

Volumn 11, Issue 8, 2008, Pages

  Noh, H Y ^a   Seol, Y G ^a   Kim, S I ^a   Lee, N E ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; COUPLING AGENTS; CURRENT DENSITY; DIELECTRIC MATERIALS; GATES (TRANSISTOR); LEAKAGE CURRENTS; METALLIC MATRIX COMPOSITES; NANOCOMPOSITES; NANOSTRUCTURED MATERIALS; OZONE WATER TREATMENT; PHENOLS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS;

CYCLIC BENDING; DEVICE PERFORMANCES; ELECTROCHEMICAL SOCIETY (ECS); GATE DIELECTRIC LAYERS; LEAKAGE CURRENT DENSITIES; NANO COMPOSITES; ORGANIC THIN FILM TRANSISTOR (OTFT); ORGANIC THIN FILM TRANSISTORS (O TFT); POLY (4-VINYL PHENOL);

GATE DIELECTRICS;

EID: 45249103504     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2936266     Document Type: Article

References (19)

1. W. Clemens, W. Fix, J. Ficker, A. Knobloch, and A. Ullmann, J. Mater. Res. 0884-2914 10.1557/JMR.2004.0263, 19, 1963 (2004).
2. P. F. Baude, D. A. Ender, M. A. Haase, T. W. Kelly, D. V. Muyres, and S. D. Theiss, Appl. Phys. Lett. 0003-6951 10.1063/1.1579554, 82, 3964 (2003).
3. B. Crone, A. Doadbalapur, A. Gelperin, L. Torsi, H. E. Katz, A. J. Lovinger, and Z. Bao, Appl. Phys. Lett. 0003-6951 10.1063/1.1360785, 78, 2229 (2001).
4. I. Graz, M. Kaltenbrunner, C. Keplinger, R. Schwödiauer, S. Bauer, S. P. Lacour, and S. Wagner, Appl. Phys. Lett. 0003-6951 10.1063/1.2335838, 89, 073501 (2006).
5. C. D. Sheraw, L. Zhou, J. R. Huang, D. J. Gunbdlich, T. N. Jackson, M. G. Kane, I. G. Hill, M. S. Hammond, J. Campi, B. K. Greening, Appl. Phys. Lett. 0003-6951 10.1063/1.1448659, 80, 1088 (2002).
6. L. Zhou, A. Wanga, S. -C. Wu, J. Sun, S. Park, and T. N. Jackson, Appl. Phys. Lett. 0003-6951 10.1063/1.2178213, 88, 083502 (2006).
7. P. Mach, S. J. Rodriguez, R. Nortrup, P. Wiltiuz, and J. A. Rogers, Appl. Phys. Lett. 0003-6951 10.1063/1.1377312, 78, 3592 (2001).
8. A. Facchetti, M. H. Yoon, and T. J. Marks, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200500517, 17, 1705 (2005).
9. Th. B. Singh, F. Meghdadi, S. Günes, N. Marjanovic, G. Horowitz, P. Lang, S. Bauer, and N. S. Sariciftci, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200501109, 17, 2315 (2005).
10. R. Schroeder, L. A. Majewski, and M. Grell, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200401398, 17, 1535 (2005).
11. F. -C. Chen, C. -W. Chu, J. He, and Y. Yang, Appl. Phys. Lett. 0003-6951 10.1063/1.1806283, 85, 3295 (2004).
12. M. Zirkl, A. Haase, A. Fian, H. Schön, C. Sommer, G. Jakopic, G. Leising, B. Stadlober, I. Graz, N. Gaar, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200700831, 19, 2241 (2007).
13. F. -C. Chen, C. -S. Chuang, Y. -S. Lin, L. -J. Kung, T. -H. Chen, and H. -P. D. Shieh, Org. Electron. 1566-1199 10.1016/j.orgel.2006.06.009, 7, 435 (2006).
14. Y. G. Seol, J. G. Lee, and N. -E. Lee, Org. Electron., 8, 513 (2007). 1566-1199
15. H. Gleskova, S. Wagner, W. Soboyejo, and Z. Suo, J. Appl. Phys. 0021-8979 10.1063/1.1513187, 92, 6224 (2002).
16. Z. Suo, E. Y. Ma, H. Gleskova, and S. Wagner, Appl. Phys. Lett. 0003-6951 10.1063/1.123478, 74, 1177 (1999).
17. T. Sekitani, S. Iba, Y. Kato, Y. Noguchi, T. Sakurai, and T. Someya, J. Non-Cryst. Solids 0022-3093 10.1016/j.jnoncrysol.2005.11.122, 352, 1769 (2006).
18. E. Vassileva and K. Friedrich, J. Appl. Polym. Sci., 101, 4410 (2006). 0021-8995
19. S. Steudel, S. D. Vusser, S. D. Jonge, D. Janssen, S. Verlaak, J. Genoe, and P. Heremans, Appl. Phys. Lett. 0003-6951 10.1063/1.1815042, 85, 4400 (2004).