Low-temperature processed flexible In-Ga-Zn-O thin-film transistors exhibiting high electrical performance

IEEE Electron Device Letters

Volumn 32, Issue 12, 2011, Pages 1692-1694

  Yang, Shinhyuk ^a   Bak, Jun Yong ^b   Yoon, Sung Min ^b   Ryu, Min Ki ^a   Oh, Himchan ^a   Hwang, Chi Sun ^a   Kim, Gi Heon ^a   Park, Sang Hee Ko ^a   Jang, Jin ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

Oxide; Sputtering; Thin film transistor (TFT); Transparent

Indexed keywords

ANNEALING TIME; ELECTRICAL PERFORMANCE; LAMINATED POLYETHYLENE; LOW TEMPERATURES; ON-OFF RATIO; PLASTIC SUBSTRATES; POSITIVE GATE BIAS; SATURATION MOBILITY; SUBTHRESHOLD SLOPE; THIN-FILM TRANSISTOR (TFT); TRANSPARENT;

GALLIUM; GALLIUM ALLOYS; OXIDES; SEMICONDUCTING ORGANIC COMPOUNDS; SPUTTERING; SUBSTRATES; ZINC;

THIN FILM TRANSISTORS;

EID: 81855206548     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2167122     Document Type: Article

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