Phosphor-free InGaN/GaN Dot-in-a-wire white light-emitting diodes on copper substrates

Journal of Electronic Materials

Volumn 43, Issue 4, 2014, Pages 868-872

  Nguyen, Hieu Pham Trung ^a   Wang, Qi ^a   Mi, Zetian ^a  

^a MCGILL UNIVERSITY   (Canada)

Author keywords

InGaN; light emitting diodes; molecular beam epitaxy; Nanowire

Indexed keywords

COPPER; CURRENT VOLTAGE CHARACTERISTICS; DIODES; III-V SEMICONDUCTORS; INDIUM COMPOUNDS; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NANOWIRES; PHOSPHORS; SILICA; SILICON; SUBSTRATES;

COPPER SUBSTRATES; ETCH-STOP LAYERS; HIGHLY STABLES; INGAN; SUBSTRATE ABSORPTIONS; SUBSTRATE TRANSFER; WHITE LIGHT EMISSION; WHITE LIGHT EMITTING DIODES;

GALLIUM COMPOUNDS;

EID: 84899105230     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-014-3023-7     Document Type: Article

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