Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes

Applied Physics Letters

Volumn 100, Issue 24, 2012, Pages

  Chen, Tufu ^a   Wang, Yunqian ^a   Xiang, Peng ^a   Luo, Ruihong ^a   Liu, Minggang ^a   Yang, Weimin ^a   Ren, Yuan ^a   He, Zhiyuan ^a   Yang, Yibin ^a   Chen, Weijie ^a   Zhang, Xiaorong ^a   Wu, Zhisheng ^a   Liu, Yang ^a   Zhang, Baijun ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK FREE; CRYSTALLINE QUALITY; EMBEDDED ELECTRODES; HIGH-RESOLUTION X-RAY DIFFRACTION; INJECTION CURRENTS; INTERNAL QUANTUM EFFICIENCY; LIGHT OUTPUT; QUANTUM-CONFINED STARK EFFECT; ROUGH SURFACES; SI(111) SUBSTRATE; SILICON SUBSTRATES;

COPPER; CRACKS; GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON; STRAIN RELAXATION; X RAY DIFFRACTION;

LIGHT EMITTING DIODES;

EID: 84863330980     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4729414     Document Type: Article

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