Transfer of GaN-based light-emitting diodes from silicon growth substrate to copper

IEEE Electron Device Letters

Volumn 31, Issue 2, 2010, Pages 132-134

  Wong, Ka Ming ^a   Zou, Xinbo ^a   Chen, Peng ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Copper; GaN; Light emitting diode (LED)

Indexed keywords

COPPER LAYER; COPPER SUBSTRATES; COST MANUFACTURING; FABRICATED DEVICE; GAN; GAN LIGHT-EMITTING DIODES; GAN-BASED LIGHT-EMITTING DIODES; HEAT DISSIPATION; IC TECHNOLOGY; III-NITRIDE; INGAN LED; LIGHT EXTRACTION; MULTIPLE QUANTUM WELLS; OPTICAL OUTPUT POWER; SAPPHIRE WAFER; SI SUBSTRATES; SI(111) SUBSTRATE; SILICON GROWTH; SILICON SUBSTRATES; SOLID STATE LIGHTING; TOP SURFACE;

COPPER; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON; SILICON WAFERS;

SUBSTRATES;

EID: 75749105349     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2037346     Document Type: Article

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