Graphene transparent electrode for enhanced optical power and thermal stability in GaN light-emitting diodes

Nanotechnology

Volumn 24, Issue 7, 2013, Pages

  Youn, Doo Hyeb ^a   Yu, Young Jun ^a   Choi, Hongkyw ^a,b   Kim, Suck Hwan ^a   Choi, Sung Yool ^c   Choi, Choon Gi ^a,b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CHEMICAL TREATMENTS; CHEMICALLY DOPED; CONDUCTING LAYERS; CURRENT SPREADING; GAN LEDS; GAN LIGHT-EMITTING DIODES; HIGH INJECTION; LOW-RESISTANCE CONTACTS; OPTICAL POWER; PATTERNING METHODS; POTENTIAL BARRIERS; POWER DEGRADATION; TRANSPARENT ELECTRODE;

CHEMICAL VAPOR DEPOSITION; CONTACT RESISTANCE; GALLIUM NITRIDE; LIGHT EMITTING DIODES; THERMODYNAMIC STABILITY;

GRAPHENE;

EID: 84873324259     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/7/075202     Document Type: Article

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