Metal gate work function tuning by Al incorporation in TiN

Journal of Applied Physics

Volumn 115, Issue 7, 2014, Pages

  Lima, L P B ^a,b,c   Dekkers, H F W ^a   Lisoni, J G ^a   Diniz, J A ^b   Van Elshocht, S ^a   De Gendt, S ^a,c  

^a IMEC   (Belgium)

^b UNIVERSITY OF CAMPINAS   (Brazil)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM NITRIDE; DIELECTRIC MATERIALS; HAFNIUM OXIDES; MOS DEVICES; TIN OXIDES; WORK FUNCTION;

AL INCORPORATION; ALUMINUM NITRIDE (ALN); DIFFUSION SOURCES; EFFECTIVE WORK FUNCTION; LAMINATE STACKS; LAMINATE STRUCTURES; METAL OXIDE SEMICONDUCTOR; TITANIUM ALUMINUM;

TITANIUM NITRIDE;

EID: 84898988430     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4866323     Document Type: Article

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