MOSFET 1/f noise model based on mobility fluctuation in linear region

Electronics Letters

Volumn 38, Issue 9, 2002, Pages 429-431

  Xu, Jiansheng ^a   Deen, M Jamal ^b  

^a UNIVERSITY OF WATERLOO   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMMUNICATION CHANNELS (INFORMATION THEORY); COMPUTER SIMULATION; ELECTRIC FIELDS; FREQUENCIES; FUNCTIONS; MATHEMATICAL MODELS; SPURIOUS SIGNAL NOISE;

LINEAR REGION; MOBILITY FLUCTUATION; SOURCE JUNCTION;

MOSFET DEVICES;

EID: 0037171903     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020282     Document Type: Article

References (5)

1. Model for 1/f noise in metal-oxide-semiconductor transistors
2. On 1/f trapping noise in MOSTs
3. A unified model for the flicker noise in metal-oxide semiconductor field-effect transistors
4. Critical discussion on unified 1/f noise model for MOSFETs